inchange semiconductor isc product specification isc silicon npn power transistor BUL742C description collector?emitter breakdown voltage : v (br)ceo = 400v(min.) collector saturation voltage : v ce( sat ) = 0.2v(max) @ i c = 0.8a applications designed for electronic lamp ballast circuits switch-mode power supplies applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 900 v v cew collector-emitter voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 11 v i c collector current-continuous 5 a i cm collector current-peak 7.5 a i b b base current-continuous 2.5 a i bm base current-peak 4 a p c collector power dissipation t c =25 50 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 2.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL742C electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 500ma; l= 125mh, i measure = 100ma 400 v v (br)ebo emitter-base breakdown voltage i e = 1ma; i c = 0 11 v v ce (sat)-1 collector-emitter saturation voltage i c = 0.8a; i b = 0.2a 0.2 v v ce (sat)-2 collector-emitter saturation voltage i c = 2.5a; i b = 0.8a 0.4 v v be (sat)-1 base-emitter saturation voltage i c = 0.8a; i b = 0.2a 1.0 v v be (sat)-2 base-emitter saturation voltage i c = 2.5a; i b = 0.8a 1.2 v i ces collector cutoff current v ces = 900v ; v eb =0 v ces = 900v ; v eb =0,t c = 150 10 200 a h fe-1 dc current gain i c = 10ma; v ce = 2v 15 h fe-2 dc current gain i c = 0.8a; v ce = 2v 15 h fe-3 dc current gain i c = 2.5a; v ce = 2v 7 h fe-4 dc current gain i c = 5a; v ce = 2v 4 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 60 pf v cew collector-emitter working voltage v s = 50v; l= 1mh; i c = 2.5a; i b1 = -i b2 = 0.5a; v be(off) = -5v 500 v f t current-gain?bandwidth product i c = 0.2a; v ce = 10v; f= 1mhz 4 mhz isc website www.iscsemi.cn
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